Publications

This section reviews my publications in research during my scientific career.
Highlights: 1x Nature, 1x Phys. Rev. Lett., 2x Appl. Phys. Lett.

journals and books

Aluminium arsenide cleaved-edge overgrown quantum wires
J. Moser, T. Zibold, D. Schuh, M. Bichler, F. Ertl, G. Abstreiter, M. Grayson, S. Roddaro, and V. Pellegrini
Appl. Phys. Lett. 87, 052101 (2005).
[paper printed]
Design and optimization of vertical CEO-T-FETs with atomically precise ultrashort gates by simulation with quantum transport models
J. Höntschel, W. Klix, R. Stenzel, F. Ertl, and G. Abstreiter
in: Proceedings of the 27th International Conference on the Physics of Semiconductors, AIP Conference Proceedings 772, eds.: J. Menendez, and C. G. van de Walle, American Institute of Physics Publishing Melville, pp. 1501 (2005).
[paper printed]
Resonant tunneling between parallel 1D quantum wires and adjoining 2D electron reservoirs
F. Ertl, S. Roth, D. Schuh, M. Bichler, and G. Abstreiter
Physica E 22, 292 (2004).
[paper printed]
Anomalous filling factor dependent nuclear spin polarization in a 2D electron system
J. H. Smet, R. A. Deutschmann, F. Ertl, W. Wegscheider, G. Abstreiter, and K. von Klitzing
Phys. Rev. Lett. 92, 086802 (2004).
[paper printed]
Anisotropic high-mobility quantum Hall transport: two-dimensional electrons subject to few millikelvins and misoriented substrates
F. Ertl, O. Jaeger, R. A. Deutschmann, M. Bichler, G. Abstreiter, E. Schuberth, C. Probst, and W. Wegscheider
in: Physics of Semiconductors 2002, IOP Conference Series 171, eds.: A. R. Long, and J. H. Davies, Institute of Physics Publishing Bristol, E2.2 (2003).
[paper printed]
Device characteristics of vertical field effect transistors with ultra-short InGaAs/GaAs channels
F. Ertl, R. A. Deutschmann, D. Schuh, M. Bichler, and G. Abstreiter
in: Compound Semiconductors 2001, IOP Conference Series 170, eds.: Y. Arakawa, Y. Hirayama, K. Kishino, and H. Yamaguchi, Institute of Physics Publishing Bristol, pp. 295 (2002).
[paper printed]
Vertical field effect transistors realized by cleaved-edge overgrowth
F. Ertl, T. Asperger, R. A. Deutschmann, W. Wegscheider, M. Bichler, G. Böhm, and G. Abstreiter
Physica E 13, 920 (2002).
[paper printed]
Low temperature properties of the p-type surface conductivity of diamond
C. E. Nebel, F. Ertl, C. Sauerer, M. Stutzmann, C. F. O. Graeff, P. Bergonzo, O. A. Williams, and R. B. Jackman,
Diam. Rel. Mat. 11, 351 (2002).
[paper printed]
Physiker entwickeln neuartigen Feldeffekttransistor-Elektronik mit Spins
F. Ertl
TUM-Mitteilungen 4, 38 (2002).
[paper printed]
Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor
J. H. Smet, R. A. Deutschmann, F. Ertl, W. Wegscheider, G. Abstreiter, and K. von Klitzing
Nature 415, 281 (2002).
[paper printed]
Hydrogen induced transport properties of holes in diamond surface layers
C. E. Nebel, C. Sauerer, F. Ertl, M. Stutzmann, C. F. O. Graeff, P. Bergonzo, O. A. Williams, and R. B. Jackman
Appl. Phys. Lett. 79, 4541 (2001).
[paper printed]
Simulation of vertical CEOFETs by a coupled solution of the Schrödinger equation with a hydrodynamic model
J. Höntschel, R. Stenzel, W. Klix, F. Ertl, T. Asperger, R. A. Deutschmann, M. Bichler, and G. Abstreiter
in: Simulation of Semiconductor Processes and Devices 2001, Springer Conference Proceedings, eds.: D. Tsoukalas, and C. Tsamis, Springer Berlin, pp. 222 (2001).
[paper printed]
Low temperature surface conductivity of hydrogenated diamond
C. Sauerer, F. Ertl, C. E. Nebel, M. Stutzmann, P. Bergonzo, O. A. Williams, and R. A. Jackman
Phys. Stat. Sol. (a) 186, 241 (2001).
[paper printed]
Investigation of conductance fluctuations in quantum wires fabricated by cleaved edge overgrowth
F. Ertl, M. Rother, W. Wegscheider, M. Bichler, and G. Abstreiter
in: Proceedings of the 25th International Conference on the Physics of Semiconductors, Springer Proceedings in Physics 87, eds.: N. Miura, and T. Ando, Springer Berlin, pp. 1027 (2001).
[paper printed]
Quantum wires as Luttinger liquids: experiment
W. Wegscheider, M. Rother, F. Ertl, R. A. Deutschmann, M. Bichler, and G. Abstreiter
in: Advances in Solid State Physics, Vol. 40, ed.: B. Kramer, Vieweg Braunschweig, pp. 97 (2000).
[paper printed]

annual reports

Cleaved-edge overgrown aluminium arsenide quantum wires
J. Moser, M. Grayson, F. Ertl, D. Schuh, M. Bichler, and G. Abstreiter
Annual Report 2003, Walter Schottky Institute, 36 (2004).
[download pdf (67 kB)] [report printed]
2D-1D-2D Resonant tunneling transistor
S. Roth, F. Ertl, D. Schuh, M. Bichler, and G. Abstreiter
Annual Report 2002, Walter Schottky Institute, 98 (2003).
[download pdf (353 kB)] [report printed]
Vertical FETs with ultra-short InGaAs channels
F. Ertl, R. A. Deutschmann, D. Schuh, M. Bichler, and G. Abstreiter
Annual Report 2001, Walter Schottky Institute, 76 (2002).
[download pdf (258 kB)] [report printed]
Growth and transport of high mobility electron systems in (110) and (001) GaAs
M. Grayson, F. Fischer, D. Schuh, O. Jaeger, F. Ertl, E. Schuberth, C. Probst, R. A. Deutschmann, W. Wegscheider, M. Bichler, and G. Abstreiter
Annual Report 2001, Walter Schottky Institute, 30 (2002).
[download pdf (214 kB)] [report printed]
Vertical transistors with ultra-short channel lengths
F. Ertl, T. Asperger, R. A. Deutschmann, M. Bichler, and G. Abstreiter
Annual Report 2000, Walter Schottky Institute, 88 (2001).
[download pdf (404 kB)] [report printed]
Anisotropic quantum Hall systems at millikelvin temperatures
O. Jaeger, F. Ertl, E. Schuberth, C. Probst, W. Wegscheider, R. A. Deutschmann, M. Bichler, and G. Abstreiter
Annual Report 2000, Walter Schottky Institute, 14 (2001).
[download pdf (545 kB)] [report printed]
Anisotropy of high mobility electron systems at millikelvin temperatures
O. Jaeger, F. Ertl, R. A. Deutschmann, M. Bichler, G. Abstreiter, E. Schuberth, and C. Probst
Annual Report 2000, Walther Meissner Institute, 31 (2001).
[download pdf (887 kB)] [report printed]
Cleaved edge overgrowth quantum wires - subband structure and conductance fluctuations
M. Rother, F. Ertl, R. A. Deutschmann, W. Wegscheider, M. Bichler, and G. Abstreiter
Annual Report 1999, Walter Schottky Institute, 14 (2000).
[download pdf (210 kB)] [report printed]

other writing

Untersuchung von Leitwertfluktuationen an Quantendrähten hergestellt durch Überwachsen von Spaltflächen
F. Ertl, MSc Thesis, Walter Schottky Institute, (1999).
[download abstract pdf (89kB)] [thesis german]
Anisotrope Quanten-Hall-Systeme, Vertikale Ultrakurzkanal- und Tunnel-Transistoren
F. Ertl, PhD Thesis, Walter Schottky Institute, (2006).
in: Selected Topics of Semiconductor Physics and Technology, Vol. 82, eds.: G. Abstreiter, M.-C. Amann, M. Stutzmann, and P. Vogl, Printy Digitaldruck München, ISBN 3-932749-82-0
[download abstract pdf (41kB)] [thesis german]