DR. Frank Ertl

Shortchannel FET


Vertical field effect transistors (FET) with extremely short channels are subject of this research project.

Typical sample structure

Typical measurement trace

Further information


  • J. Höntschel, R. Stenzel (simulation of semiconductor devices)
    Department of Electrical Engineering, University of Applied Sciences Dresden, Dresden, Germany
  • F. Schwerdt, O. Schmidt, W. Dietsche (molecular beam epitaxy of semiconductors)
    Max-Planck-Institut für Festkörperphysik, Max-Planck-Gesellschaft, Stuttgart, Germany


  • Anisotrope Quanten-Hall-Systeme, Vertikale Ultrakurzkanal- und Tunnel-Transistoren
    F. Ertl, PhD Thesis, Walter Schottky Institute, (2006).
    in: Selected Topics of Semiconductor Physics and Technology, Vol. 82, eds.: G. Abstreiter, M.-C. Amann, M. Stutzmann, and P. Vogl, Printy Digitaldruck München, ISBN 3-932749-82-0
    [download abstract pdf (41kB)] [thesis german]



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Update: 23/08/13