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molecular beam epitaxy
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Molecular Beam Epitaxy (MBE) is employed to grow atomically precise
hetero- structures in the lattice-matched InGaAlAs material-system with
n-type Si doping. This MBE facility is optimized for fabrication of
highmobility
samples on (001) and (110) crystal surfaces. Therefore great care is taken to provide
a ultra-clean environment and extremely-pure source materials during
the growth.
Peak values in the mobility of a modulation doped single interface hetero-structure grown on these different surfaces are summarized in the following
table:
surface |
mobility |
density |
temperature |
(001) |
11.5 x 106 cm2/Vs |
2.05 x 1011 1/cm2 |
1.3 K |
(110) |
4.6 x 106 cm2/Vs |
1.25 x 1011 1/cm2 |
1.3 K |
Research projects including highmobility electron systems were dedicated to the anisotropic behavior in the quantum Hall
regime, see the highmobility
electron systems section for further information.
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cleaved edge overgrowth
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The power of the Cleaved Edge Overgrowth (CEO) technique is to realize
special low-dimensional systems of nearly arbitrary geometry grown on GaAs single
crystals. This technique relies on two important facts: First, epitaxially
overgrown
(001)-GaAs single crystals naturally cleave in (110)-directions, leaving
large areas of atomically flat regions; Second, epitaxial growth on
the (110)-surface of GaAs is also established with highest
quality. Exploiting these properties the CEO method consists of following steps: First, growth of a hetero-structure in the (001)-direction; Then, in-situ cleaving the crystal; Finally, growing a
layer-sequence on the freshly exposed (110)-plane (the last two
steps could be repeated another time). By combining layer-sequences with a
confining potential in two or more spatially orthogonal directions, a low-dimensional electron
system can be created this way.
Research projects on cleaved edge overgrowth devices covered the following
areas: highquality quantum wires,
shortchannel
transistors, tunneling transistors and superlattice
transistors.
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