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Vertical field effect transistors (FET) with embedded
tunneling barriers are subject of this research project.
Typical sample structure
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Typical measurement trace
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Further information
Publications
- Anisotrope Quanten-Hall-Systeme, Vertikale
Ultrakurzkanal- und Tunnel-Transistoren
F. Ertl, PhD Thesis, Walter Schottky Institute, (2006).
in: Selected Topics of Semiconductor Physics and Technology, Vol. 82,
eds.: G. Abstreiter, M.-C. Amann, M. Stutzmann, and P. Vogl, Printy
Digitaldruck München, ISBN 3-932749-82-0
[download abstract pdf (41kB)]
[thesis german]
- Resonantes Tunneln durch gekoppelte Quantendrähte zwischen
zweidimensionalen Elektronengasen
S. Roth, MSc Thesis, Walter Schottky Institute, (2003).
[download abstract pdf (87
kB)] [thesis german]
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